Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry
Identifieur interne : 00FB25 ( Main/Repository ); précédent : 00FB24; suivant : 00FB26Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry
Auteurs : RBID : Pascal:01-0489252Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We study the optical properties of compressively strained InxGa1-xAs1-yNy (x<0.13, y<0.03) single layers for photon energies from 0.75 to 1.3 eV (near infrared), and for wave numbers from 100 to 600 cm-1 (far infrared) using spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor-phase epitaxy. We provide parametric model functions for the dielectric function spectra of InGaAsN for both spectral ranges studied here. The InGaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm-1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm-1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain εxx resulting from the lattice mismatch between InGaAsN and GaAs. This effect is used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f dependence with results from high-resolution double-crystal x-ray diffractometry and using Vegards law for the lattice constants and the elastic coefficients C11 and C12. The calculated nitrogen concentrations reflect growth properties such as increasing N incorporation in InGaAsN with decreasing growth temperature, with increasing concentration of nitrogen in the gas phase, and with decreasing indium concentration in InGaAsN. © 2001 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 010336
Links to Exploration step
Pascal:01-0489252Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry</title><author><name sortKey="Leibiger, G" uniqKey="Leibiger G">G. Leibiger</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln</wicri:cityArea></affiliation></author><author><name sortKey="Gottschalch, V" uniqKey="Gottschalch V">V. Gottschalch</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Schubert, M" uniqKey="Schubert M">M. Schubert</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig</wicri:regionArea><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0489252</idno><date when="2001-12-15">2001-12-15</date><idno type="stanalyst">PASCAL 01-0489252 AIP</idno><idno type="RBID">Pascal:01-0489252</idno><idno type="wicri:Area/Main/Corpus">010336</idno><idno type="wicri:Area/Main/Repository">00FB25</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Dielectric function</term><term>Ellipsometry</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared spectra</term><term>MOCVD coatings</term><term>Optical constants</term><term>Phonon spectra</term><term>Semiconductor epitaxial layers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7830F</term><term>7820C</term><term>6320D</term><term>6855N</term><term>Etude expérimentale</term><term>Ellipsométrie</term><term>Semiconducteur III-V</term><term>Indium composé</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Couche épitaxique semiconductrice</term><term>Spectre phonon</term><term>Fonction diélectrique</term><term>Constante optique</term><term>Spectre IR</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We study the optical properties of compressively strained In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> (x<0.13, y<0.03) single layers for photon energies from 0.75 to 1.3 eV (near infrared), and for wave numbers from 100 to 600 cm-1 (far infrared) using spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor-phase epitaxy. We provide parametric model functions for the dielectric function spectra of InGaAsN for both spectral ranges studied here. The InGaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm-1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm-1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain ε<sub>xx</sub> resulting from the lattice mismatch between InGaAsN and GaAs. This effect is used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f dependence with results from high-resolution double-crystal x-ray diffractometry and using Vegards law for the lattice constants and the elastic coefficients C<sub>11</sub> and C<sub>12</sub>. The calculated nitrogen concentrations reflect growth properties such as increasing N incorporation in InGaAsN with decreasing growth temperature, with increasing concentration of nitrogen in the gas phase, and with decreasing indium concentration in InGaAsN. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>90</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry</s1></fA08><fA11 i1="01" i2="1"><s1>LEIBIGER (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>GOTTSCHALCH (V.)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHUBERT (M.)</s1></fA11><fA14 i1="01"><s1>Faculty of Chemistry and Mineralogy, Semiconductor Chemistry Group, University of Leipzig, Linnestrasse 3, 04103 Leipzig, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588</s1></fA14><fA20><s1>5951-5958</s1></fA20><fA21><s1>2001-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0489252</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We study the optical properties of compressively strained In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>N<sub>y</sub> (x<0.13, y<0.03) single layers for photon energies from 0.75 to 1.3 eV (near infrared), and for wave numbers from 100 to 600 cm-1 (far infrared) using spectroscopic ellipsometry. The intentionally undoped InGaAsN layers were grown pseudomorphically on top of undoped GaAs buffer layers deposited on Te-doped (001) GaAs substrates by metalorganic vapor-phase epitaxy. We provide parametric model functions for the dielectric function spectra of InGaAsN for both spectral ranges studied here. The InGaAsN layers show a two-mode phonon behavior in the spectral range from 100 to 600 cm-1. We detect the transverse GaAs- and GaN-sublattice phonon modes at wave numbers of about 267 and 470 cm-1, respectively. The polar strength f of the GaN sublattice resonance changes with nitrogen composition y and with the biaxial strain ε<sub>xx</sub> resulting from the lattice mismatch between InGaAsN and GaAs. This effect is used to derive the nitrogen and indium content of the InGaAsN layers combining the observed f dependence with results from high-resolution double-crystal x-ray diffractometry and using Vegards law for the lattice constants and the elastic coefficients C<sub>11</sub> and C<sub>12</sub>. The calculated nitrogen concentrations reflect growth properties such as increasing N incorporation in InGaAsN with decreasing growth temperature, with increasing concentration of nitrogen in the gas phase, and with decreasing indium concentration in InGaAsN. © 2001 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H30F</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="04" i2="3"><s0>001B60C20D</s0></fC02><fC02 i1="05" i2="3"><s0>001B60H55N</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7830F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>6855N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Ellipsométrie</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Ellipsometry</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Spectre phonon</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Phonon spectra</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Fonction diélectrique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Dielectric function</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Constante optique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Optical constants</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>MOCVD coatings</s0><s4>INC</s4></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Spectre IR</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Infrared spectra</s0></fC03><fN21><s1>344</s1></fN21><fN47 i1="01" i2="1"><s0>0149M000140</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00FB25 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00FB25 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:01-0489252
|texte= Optical functions, phonon properties, and composition of InGaAsN single layers derived from far- and near-infrared spectroscopic ellipsometry
}}
| This area was generated with Dilib version V0.5.77. |  |